Method for forming silicon containing layers on a substrate
US6656840B2 · kind B2 · utility
23Cited by
11References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2002 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Apr 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a microelectronics device is disclosed. In one embodiment, the method includes depositing a conductive structure on a substrate. A first layer comprising silicon and nitrogen is formed on the substrate. A second layer comprising silicon and nitrogen is then formed on the first layer. The nitrogen to silicon ratio in the first layer is greater than the nitrogen to silicon ratio in the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.