Shallow trench isolation (STI) region with high-K liner and method of formation
US6657276B1 · kind B1 · utility
122Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2002 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Jun 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A shallow trench isolation region formed in a layer of semiconductor material. The shallow trench isolation region includes a trench formed in the layer of semiconductor material, the trench being defined by sidewalls and a bottom; a liner within the trench formed from a high-K material, the liner conforming to the sidewalls and bottom of the trench; and a fill section made from isolating material, and disposed within and conforming to the high-K liner. A method of forming the shallow trench isolation region is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.