Electron emission devices and field emission display devices having buffer layer of microcrystalline silicon
US6657376B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 1999 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Jun 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In one aspect, an electron emission device comprises a substrate, and a first layer supported by the substrate. The first layer comprises a conductive material. The electron emission display device further comprises an electron emission tip electrically connected with the first layer, and a second layer electrically disposed between the first layer and the electron emission tip. The second layer comprises microcrystalline silicon. In another aspect, the invention encompasses a method of forming an electron emission device. A substrate is provided, and a conductive layer is formed over the substrate. A microcrystalline-silicon-containing layer is formed over the conductive layer, and a resistor layer is formed over the microcrystalline-silicon-containing layer. An emitter tip is formed over the resistor layer. In yet other aspects, the invention encompasses field emission display devices, and methods of forming field emission display devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.