Plasma method and apparatus for processing a substrate
US6660659B1 · kind B1 · utility
29Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2002 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Jun 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02332
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one aspect of the invention, a method is provided of processing a substrate, including locating the substrate in a processing chamber, creating a nitrogen plasma in the chamber, the plasma having an ion density of at least 1010 cm−3, and a potential of less than 20 V, and exposing a layer on the substrate to the plasma to incorporate nitrogen of the plasma into the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.