Method of reducing plasma charge damage for plasma processes
US6660662B2 · kind B2 · utility
456Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2001 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Aug 1, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/455
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.