Structure and method for formation of a blocked silicide resistor
US6660664B1 · kind B1 · utility
4Cited by
17References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2000 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Mar 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02343
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of forming a nitride film on a semiconductor substrate including exposing a surface of the substrate to a rapid thermal process to form the nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.