Composition and method for cleaning residual debris from semiconductor surfaces
US6664611B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2002 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Jan 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing a dielectric anti-reflective coating (DARC) of silicon oxynitride material from a layer of insulative material which is formed over a substrate in a semiconductor device involves contacting the DARC material with a mixture of tetramethylammonium fluoride and at least one acid such as hydrofluoric acid, hydrochloric acid, nitric acid, phosphoric acid, acetic acid, citric acid, sulfuric acid, carbonic acid or ethylenediamine tetraacetic acid. Contact with the mixture is for a time period sufficient to remove substantially all of the DARC material. The mixture has a high etch rate selectivity such that the DARC coating can be removed with minimal effect on the underlying insulative layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.