Patent · US Expired

Semiconductor component having double passivating layers formed of two passivating layers of different dielectric materials

US6664612B2 · kind B2 · utility

1Cited by

9References

4Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Josef Willer · Riemerling, DE
Paul-Werner von Basse · Wolfratshausen, DE
Thomas Scheiter · Munich, DE

Key dates

Filing date	Jan 9, 2001
Grant date	Dec 16, 2003
Priority date	—
Expiry date	Jan 9, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/3192
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor component with passivation includes at least two double passivating layers, of which an uppermost is applied to a planar surface of a layer located therebelow. The double passivating layers include two layers of different dielectric materials, for example silicon oxide and silicon nitride. The respective thicknesses of the individual passivating layers can be adapted to dimensions of the structuring of the layer to which the passivation is applied. This produces a reliable passivation which is particularly suitable for capacitively measuring fingerprint sensors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.