Semiconductor component with a charge compensation structure and associated fabrication

US6667514B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Dirk Ahlers · Hersbruck, DE
• Gerald Deboy · Klagenfurt, AT
• Hans Weber · Villach, AT
• Armin Willmeroth · Friedberg, DE

Key dates

• Filing date: Jul 3, 2002
• Grant date: Dec 23, 2003
• Expiry date: Jul 3, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A semiconductor component includes a charge compensation structure wherein locations with a maximum local field strength are positioned in a compensation edge region of the charge compensation structure. Thus, an electrical parameter such as the on resistance of the semiconductor component can be substantially improved without influencing or impairing further parameters such as the breakdown voltage and the robustness with respect to TRAPATT oscillations. Methods of fabricating a semiconductor component with a charge compensation structure are also provided.