Process chamber having multiple gas distributors and method
US6676760B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2001 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Aug 16, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/455
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.