Method for planarizing barc layer in dual damascene process
US6680252B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2001 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | Sep 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a method for planarizing BARC layer in dual damascene process. For forming a dual damascene interconnect structure, by use of the present invention, a planar topography of the BARC layer is achieved by chemical mechanical polishing. The present invention applies a low temperature to bake the coated BARC layer before BARC material cross-links and induces the anti-reflective characteristic. Then, the BARC layer is planarized by chemical mechanical polishing. Next, a high temperature baking of the BARC layer is provided before coating the photoresist, so formation of the BARC layer is controlled with minimized variation in surface level and has the antireflective characteristic. Thus, the profile distortion on the via and the critical dimension control for the via are improved by patterning the via on a planar and an anti-reflective surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.