Insulating cap layer and conductive cap layer for semiconductor devices with magnetic material layers
US6680500B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 31, 2002 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | Jul 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device (100) and method of fabrication thereof, wherein a plurality of first conductive lines (116) are formed in a dielectric layer (112) over a substrate (110), and an insulating cap layer (140) is disposed over the first conductive lines (116) and exposed portions of the dielectric layer (112). The insulating cap layer (140) is patterned and etched to expose stack portions of the first conductive lines (116). A conductive cap layer (144) is deposited over the exposed portions of the first conductive lines (116). A magnetic material stack (118) is disposed over the insulating cap layer (140), and the magnetic material stack is etched to form magnetic stacks. The insulating cap layer (140) and conductive cap layer (144) protect the underlying first conductive line (116) material during the etching processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.