Method for forming minimally spaced MRAM structures

US6682943B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• D. Mark Durcan · Boise, US
• Gurtej S. Sandhu · Boise, US
• Trung T. Doan · Los Gatos, US
• Roger Lee · Boise, US
• Dennis Keller · Boise, US
• Ren Earl · Meridian, US

Key dates

• Filing date: Apr 27, 2001
• Grant date: Jan 27, 2004
• Expiry date: Apr 27, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/00

Abstract

A method of forming minimally spaced MRAM structures is disclosed. A photolithography technique is employed to define masking patterns, on the sidewalls of which spacers are subsequently formed to reduce the distance between any of the two adjacent masking patterns. A filler material is next used to fill in the space around the masking patterns and to form filler plugs. The masking patterns and the spacers are removed using the filler plugs as a hard mask. Digit and word lines of MRAM structures are subsequently formed.