Inventor · Boise, ID, US

D. Mark Durcan

69Patents
20h-index
38Co-inventors
88Inventor score

Filing activity: Feb 24, 1989 → Aug 5, 2013

Most-cited inventions

PatentTitleAreaCited byStatus
US7115525B2 Method for integrated circuit fabrication using pitch multiplication Emerging Cross-Sectional Technologies 455 Expired
US5013680A Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography Emerging Cross-Sectional Technologies 322 Expired
US6150253A Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same Physics 284 Expired
US6423621B1 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same Physics 234 Expired
US7253118B2 Pitch reduced patterns relative to photolithography features Electricity 117 Expired
US6498062B2 DRAM access transistor Electricity 87 Expired
US5233206A Double digitlines for multiple programming of prom applications and other anti-fuse circuit element applications Electricity 74 Expired
US4959325A Reduction of electric field effect in the bird's beak region of a DRAM cell following expansion of active region through local encroachment reduction Emerging Cross-Sectional Technologies 59 Expired
US6159818A Method of forming a container capacitor structure Emerging Cross-Sectional Technologies 57 Expired
US7557015B2 Methods of forming pluralities of capacitors Emerging Cross-Sectional Technologies 56 Expired
US5177027A Process for fabricating, on the edge of a silicon mesa, a MOSFET which has a spacer-shaped gate and a right-angled channel path Electricity 55 Expired
US6897467B2 Controllable ovanic phase-change semiconductor memory device Physics 52 Expired
US7547640B2 Method for integrated circuit fabrication using pitch multiplication Emerging Cross-Sectional Technologies 42 Active
US6329666A Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same Physics 34 Expired
US7651951B2 Pitch reduced patterns relative to photolithography features Electricity 32 Active
US7687408B2 Method for integrated circuit fabrication using pitch multiplication Emerging Cross-Sectional Technologies 30 Active
US6620680B2 Method of forming a contact structure and a container capacitor structure Electricity 29 Expired
US6999339B2 Integrated circuit including sensor to sense environmental data, method of compensating an MRAM integrated circuit for the effects of an external magnetic field, MRAM integrated circuit, and method of testing Physics 27 Expired
US5650349A Process for enhancing refresh in dynamic random access memory device Electricity 23 Expired
US6395600B1 Method of forming a contact structure and a container capacitor structure Electricity 22 Expired
US6294452A Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same Physics 20 Expired
US7629693B2 Method for integrated circuit fabrication using pitch multiplication Emerging Cross-Sectional Technologies 17 Active
US7227774B2 MRAM integrated circuits, MRAM circuits, and systems for testing MRAM integrated circuits Physics 15 Expired
US8207576B2 Pitch reduced patterns relative to photolithography features Electricity 14 Active
US5994182A Method of reducing outdiffusion from a doped three-dimensional polysilicon film into substrate by using angled implants Electricity 14 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.