Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications
US6682973B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2002 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | May 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, including steps of growing on the silicon substrate an interfacial layer of a silicon-containing dielectric material; and depositing on the interfacial layer a layer comprising at least one high-K dielectric material, in which the interfacial layer is grown by laser excitation of the silicon substrate in the presence of oxygen, nitrous oxide, nitric oxide, ammonia or a mixture of two or more thereof. In one embodiment, the silicon-containing material is silicon dioxide, silicon nitride, silicon oxynitride or a mixture thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.