Process of removing ion-implanted photoresist from a workpiece
US6683008B1 · kind B1 · utility
7Cited by
13References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2002 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Nov 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31133
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process of removing photoresist, previously subjected to ion implantation, from the surface of a workpiece. The process involves contacting the workpiece with a composition which includes liquid or supercritical carbon dioxide and between about 2% and about 20% of an alkanol having the structural formula CxX2x+1OH, where X is fluorine, hydrogen or mixtures thereof; and x is an integer of 1 to 8, said percentages being by volume, based on the total weight of the composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.