Nitrogen-based highly polymerizing plasma process for etching of organic materials in semiconductor manufacturing
US6686296B1 · kind B1 · utility
6Cited by
19References
23Claims
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Key dates
| Filing date | Nov 28, 2000 |
| Grant date | Feb 3, 2004 |
| Priority date | — |
| Expiry date | Jan 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching an organic antireflective film layer underlying a patterned resist layer on a semiconductor substrate by contacting the exposed organic film with a fluorocarbon and nitrogen etchant in the presence of a plasma-generated energy and removing exposed areas of the organic film with the etchant. An oxide layer underlying the organic film layer is substantially undamaged after contact with the etchant. The plasma is a high density plasma and preferably contains argon, C4F8, and nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.