Method for forming minimally spaced MRAM structures

US6689661B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• D. Mark Durcan · Boise, US
• Trung T. Doan · Los Gatos, US
• Roger Lee · Boise, US
• Dennis Keller · Boise, US
• Ren Earl · Meridian, US

Key dates

• Filing date: Apr 10, 2001
• Grant date: Feb 10, 2004
• Expiry date: Apr 10, 2021

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B82Y10/00
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.