Photomask frame modification to eliminate process induced critical dimension control variation
US6692878B2 · kind B2 · utility
4Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2002 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Aug 15, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An apparatus comprising a mask having an active device area and a moat. The moat substantially surrounds the mask active device area and has a width greater than a plasma specie diffusional length. A method comprising depositing a layer of resist on a mask substrate having transparent and opaque layers; and exposing the resist layer to radiation. The radiation is patterned to produce features within an active device area. The radiation is also patterned to produce a moat substantially surrounding the active device area having a width greater than a plasma specie diffusional length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.