Method of fabricating a trench-structure capacitor device

US6693016B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Martin Gutsche · Dorfen, DE
• Thomas Hecht · Dresden, DE
• Matthias Leonhardt · Stuttgart, DE
• Uwe Schroder · Dresden, DE
• Harald Seidl · Brandenburg an der Havel, DE

Key dates

• Filing date: Sep 3, 2002
• Grant date: Feb 17, 2004
• Expiry date: Sep 3, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/038

Abstract

The novel trench capacitors have a constant or increased capacitance. Materials for a second electrode region and if appropriate a first electrode region include a metallic material, a metal nitride, or the like, and/or a dielectric region is formed with a material with an increased dielectric constant. An insulation region is formed in the upper wall region of the trench after the first electrode region or the second electrode region has been formed, by selective and local oxidation.