Method for removing photoresist from low-k films in a downstream plasma system
US6693043B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2002 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Sep 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3342
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A unique photoresist strip sequence using a downstream plasma system is described. The sequence can include a RF directional plasma alone, downstream plasma alone or combine both RF plasma and downstream plasma together. The process sequence can be a single step or multiple steps, which produce high strip rates while maintaining the dielectric properties of the film. The process can be an oxidizing process carried out at low temperature and low pressure, which reduces the reactivity of the oxygen with the low-k film. Furthermore, by adding a small percentage of an additive gas, such as a fluorine-containing gas, to the plasma, the inorganic residues from the strip process are removed, leaving a clean film cleared of photoresist and residue.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.