Method for producing a region doped with boron in a SiC-layer
US6703294B1 · kind B1 · utility
9Cited by
4References
5Claims
0Family size
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Key dates
| Filing date | Oct 21, 1996 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | May 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/051
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing a crystalline layer of SiC having at least a region thereof doped with boron atoms comprises a step a) of ion implantation of boron into a layer (1) of crystalline SiC and a step b) of heating the SiC-layer for annealing it for making the boron implanted therein electrically active. The method further comprises a step c) of implanting carbon atoms in said layer (1) for forming carbon interstitials in excess with respect to carbon vacancies present in the SiC-layer before carrying out step b).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.