Copper recess formation using chemical process for fabricating barrier cap for lines and vias
US6706625B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2002 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Dec 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a planarized barrier cap layer over a metal structure comprising the following steps. A substrate having an opening formed therein is provided. The substrate having an upper surface. A planarized metal structure is formed within the opening. The planarized metal structure being substantially planar with the upper surface of the substrate. A portion of the planarized metal structure is removed using a reverse-electrochemical plating process to recess the metal structure from the upper surface of the substrate. A barrier cap layer is formed over the substrate and the recessed metal structure. The excess of the barrier cap layer is removed from over the substrate by a planarization process to form the planarized barrier cap layer over the metal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.