Method and apparatus for two-step barrier layer polishing
US6709316B1 · kind B1 · utility
17Cited by
25References
55Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2000 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Aug 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method and composition for planarizing a substrate surface having a barrier layer disposed thereon. In one aspect, the invention provides for planarizing a substrate surface having a barrier layer and a copper containing material disposed thereon including chemical mechanical polishing the substrate to selectively remove excess copper containing material, chemical mechanical polishing the substrate to selectively remove residual copper containing material and a portion of the barrier layer, and chemical mechanical polishing the substrate to selectively remove residual barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.