Multiple-step sputter deposition
US6709553B2 · kind B2 · utility
11Cited by
12References
51Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 2002 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | May 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for depositing a film on a substrate comprising a deposition interval wherein DC power is applied to a target to form a first plasma and material is sputtered from the target onto a substrate and, during a subsequent forming interval, high frequency power is applied to the target to remove material from at least a portion of the substrate. The sputtering working gas admitted to the chamber may be maintained at a first pressure during the deposition interval and the pressure of the sputtering working gas may be increased to a second pressure during the forming interval.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.