Fabrication of shallow trench isolation structures with rounded corner and self-aligned gate
US6709924B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2002 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Nov 12, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For fabricating a shallow trench isolation structure, a notched masking structure is formed over an active area of a semiconductor substrate. A shallow trench opening is formed at a side of the active area with a top corner of the shallow trench opening being exposed and facing a notched surface of the notched masking structure. Liner oxide is formed in a thermal oxidation process at the top corner of the shallow trench opening to round the top corner of the shallow trench opening. The liner oxide may also be formed on walls including the bottom corner of the shallow trench opening during the thermal oxidation process. The shallow trench opening is then filled with a trench dielectric material to form the shallow trench isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.