Allen S. Yu
55Patents
18h-index
11Co-inventors
73Inventor score
Filing activity: Feb 27, 1998 → Jan 25, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6084679A | Universal alignment marks for semiconductor defect capture and analysis | Electricity | 62 | Expired |
| US6605541B1 | Pitch reduction using a set of offset masks | Electricity | 53 | Expired |
| US6025259A | Dual damascene process using high selectivity boundary layers | Electricity | 52 | Expired |
| US6239008A | Method of making a density multiplier for semiconductor device manufacturing | Electricity | 46 | Expired |
| US6448606B1 | Semiconductor with increased gate coupling coefficient | Electricity | 34 | Expired |
| US6291332A | Electroless plated semiconductor vias and channels | Electricity | 32 | Expired |
| US6376312B1 | Formation of non-volatile memory device comprised of an array of vertical field effect transistor structures | Electricity | 32 | Expired |
| US6287968A | Method of defining copper seed layer for selective electroless plating processing | Electricity | 31 | Expired |
| US6377898B1 | Automatic defect classification comparator die selection system | Electricity | 30 | Expired |
| US6274443A | Simplified graded LDD transistor using controlled polysilicon gate profile | Electricity | 27 | Expired |
| US6013570A | LDD transistor using novel gate trim technique | Electricity | 25 | Expired |
| US6091138A | Multi-chip packaging using bump technology | Electricity | 23 | Expired |
| US6864163B1 | Fabrication of dual work-function metal gate structure for complementary field effect transistors | Electricity | 22 | Expired |
| US5985753A | Method to manufacture dual damascene using a phantom implant mask | Electricity | 21 | Expired |
| US6338001B1 | In line yield prediction using ADC determined kill ratios die health statistics and die stacking | Electricity | 21 | Expired |
| US6204133A | Self-aligned extension junction for reduced gate channel | Electricity | 21 | Expired |
| US6103616A | Method to manufacture dual damascene structures by utilizing short resist spacers | Electricity | 20 | Expired |
| US6376877B1 | Double self-aligning shallow trench isolation semiconductor and manufacturing method therefor | Electricity | 19 | Expired |
| US6100593A | Multiple chip hybrid package using bump technology | Electricity | 18 | Expired |
| US6387758B1 | Method of making vertical field effect transistor having channel length determined by the thickness of a layer of dummy material | Electricity | 18 | Expired |
| US6430572B1 | Recipe management database system | Emerging Cross-Sectional Technologies | 17 | Expired |
| US6709924B1 | Fabrication of shallow trench isolation structures with rounded corner and self-aligned gate | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6524916B1 | Controlled gate length and gate profile semiconductor device and manufacturing method therefor | Electricity | 15 | Expired |
| US6191044A | Method for forming graded LDD transistor using controlled polysilicon gate profile | Electricity | 14 | Expired |
| US6177287A | Simplified inter database communication system | Physics | 14 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.