Method for manufacturing semiconductor device
US6709984B2 · kind B2 · utility
4Cited by
8References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2002 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Aug 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.