Group III nitride compound semiconductor device and method of producing the same
US6713789B1 · kind B1 · utility
22Cited by
8References
37Claims
0Family size
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Key dates
| Filing date | Mar 1, 2000 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Mar 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first group III nitride compound layer, which is formed on a substrate by a method not using metal organic compounds as raw materials, is heated in an atmosphere of a mixture gas containing a hydrogen or nitrogen gas and an ammonia gas, so that the crystallinity of a second group III nitride compound semiconductor layer formed on the first group III nitride compound layer is improved. When the first group III nitride compound layer is formed on a substrate by a sputtering method, the thickness of the first group III nitride compound layer is set to be in a range of from 50 å to 3000 å.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.