Semiconductor devices with dual nature capping/arc layers on organic-doped silica glass inter-layer dielectrics
US6713874B1 · kind B1 · utility
22Cited by
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9Claims
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Key dates
| Filing date | Mar 27, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | May 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Degradation of organic-doped silica glass low-k inter-layer dielectrics during fabrication is significantly reduced and resolution of submicron features is improved by the formation of dual nature capping/ARC layers on inter-layer dielectric films. The capping/ARC layer is formed in-situ on the organic-doped silica glass inter-layer dielectric. The in-situ formation of the capping/ARC layer provides a strongly adhered capping/ARC layer, formed with fewer processing steps than conventional capping and ARC layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.