Patent · US Expired

Interface void monitoring in a damascene process

US6716650B2 · kind B2 · utility

0Cited by

22References

22Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Eckhard Langer · Radebeul, DE
Frank Koschinsky · Radebeul, DE
Volker Kahlert · Dresden, DE
Peter Hübler · Coswig, DE

Key dates

Filing date	Apr 11, 2002
Grant date	Apr 6, 2004
Priority date	—
Expiry date	Apr 17, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76877
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

For determining the quality of interconnections in integrated circuits, especially in damascene applications, a method of monitoring voids is disclosed, wherein a barrier metal layer is directly deposited on a planarized metal to provide a large-area surface that is not required to be destroyed for further analysis of the interface between the metal and the barrier metal layer. The analysis may be carried out by employing an electron microscope operated in a back-scatter mode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.