Method of forming a surface coating layer within an opening within a body by atomic layer deposition
US6716693B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2003 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | May 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved new process for fabricating multilevel interconnected vertical channels and horizontal channels or tunnels. The method has broad applications in semiconductors, for copper interconnects and inductors, as well as, in the field of bio-sensors for mini- or micro-columns in gas or liquid separation, gas/liquid chromatography, and in capillary separation techniques. In addition, special techniques are described to deposit by atomic layer deposition, ALD, a copper barrier layer and seed layer for electroless copper plating, filling trench and channel or tunnel openings in a type of damascene process, to form copper interconnects and inductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.