Method of forming biasable isolation regions using epitaxially grown silicon between the isolation regions
US6716719B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2002 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | May 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/763
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved isolation structure for use in an integrated circuit and a method for making the same is disclosed. In a preferred embodiment, an silicon dioxide, polysilicon, silicon dioxide stack is formed on a crystalline silicon substrate. The active areas are etched to expose the substrate, and sidewall oxides are formed on the resulting stacks to define the isolation structures, which in a preferred embodiment constitute dielectric boxes containing the polysilicon in their centers. Epitaxial silicon is grown on the exposed areas of substrate so that it is substantially as thick as the isolation structure, and these grown areas define the active areas of the substrate upon which electrical structures such as transistors can be formed. While the dielectric box provides isolation, further isolation can be provided by placing a contact to the polysilicon within the box and by providing a bias voltage to the polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.