Method of forming a through-substrate interconnect
US6716737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2002 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | Jul 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/05552
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a through-substrate interconnect for a circuit element in a microelectronics device is provided. The device is formed on a substrate having a frontside and a backside, and includes a circuit element formed on the frontside of the substrate connected to a contact pad formed on the backside of the substrate by the through-substrate interconnect. The method includes forming a first interconnect structure extending into the substrate from the frontside of the substrate, at least partially forming the circuit element such that the circuit element is in electrical communication with the first interconnect structure, and forming a second interconnect structure extending into the substrate from the backside of the substrate after forming the first interconnect structure such that the second interconnect structure is in electrical communication with the first interconnect structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.