Method of controlling striations and CD loss in contact oxide etch
US6716763B2 · kind B2 · utility
9Cited by
18References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2001 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | Feb 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for controlling striations and CD loss in a plasma etching method is disclosed. During the etching process, the substrate of semiconductor material to be etched is exposed first to plasma under a low power strike and subsequently to a conventional high power strike. CD loss has been found to be reduced by about 400 Angstroms and striations formed in the contact holes are reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.