Method of forming a substrate contact in a field effect transistor formed over a buried insulator layer

US6720242B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Gert Burbach · Dresden, DE
• Frank Heinlein · Dresden, DE
• Johannes Groschopf · Radebeul, DE
• Gotthard Jungnickel · Radeberg, DE
• Hartmut Ruelke · Dresden, DE
• Carsten Hartig · Meerane, DE

Key dates

• Filing date: May 3, 2001
• Grant date: Apr 13, 2004
• Expiry date: May 3, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method comprises a “two-step” formation of a front side substrate contact in an FET formed over a buried insulator layer on a substrate, thereby avoiding the difficulties and problems involved in etching openings of high aspect ratio through a stack of different materials, as in a conventional front side substrate contact opening.