Applications and methods of making nitrogen-free anti-reflective layers for semiconductor processing
US6720251B1 · kind B1 · utility
8Cited by
13References
18Claims
0Family size
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Key dates
| Filing date | Nov 21, 2001 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | Nov 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free anti-reflective layer produced by this technique eliminates the mushrooming and footing problems found with conventional anti-reflective layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.