Trench MOS transistor

US6720616B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Franz Hirler · Isen, DE
• Manfred Kotek · Villach, AT
• Joost Larik · Poing, DE
• Frank Pfirsch · Birkenfeld, DE

Key dates

• Filing date: Dec 26, 2001
• Grant date: Apr 13, 2004
• Expiry date: Dec 26, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A trench MOS-transistor includes a body region strengthened by an implantation area that faces the drain region to increase the avalanche resistance.