Silicide target for depositing less embrittling gate oxide and method of manufacturing silicide target
US6723183B2 · kind B2 · utility
15Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2001 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Mar 29, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/158
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a non-brittle silicide target for forming a gate oxide film made of MSi0.8-1.2 (M: Zr, Hf), and provides a non-brittle silicide target suitable for forming a ZrO2.SiO2 film or HfO2.SiO2 film that can be used as a high dielectric gate insulating film having properties to substitute an SiO2 film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.