Vertical hard mask
US6723611B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2002 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Sep 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0387
Abstract
In the course of forming a trench capacitor or similar structure, the sidewalls of an aperture in a substrate are lined with a film stack containing a diffusion barrier; an upper portion of the outer layer is stripped, so that the upper and lower portions have different materials exposed; the lower portion of the film stack is stripped while the upper portion is protected by a hardmask layer; a diffusion step is performed in the lower portion while the upper portion is protected; and a selected material such as hemispherical grained silicon is deposited selectively on the lower portion while the exposed surface of the upper portion is a material on which the selected material forms poorly, so that the diffusing material penetrates and the selected material is formed only on the lower portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.