Multiple electron beam lithography system with multiple beam modulated laser illumination

US6724002B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Marian Mankos · Palo Alto, US
• Steven Thomas Coyle · Alameda, US
• Andres Fernandez · San Francisco, US
• Allan L. Sagle · Berkeley, US
• Paul C. Allen · Beaverton, US
• Xiaolan Chen · Beaverton, US
• Douglas E. Holmgren · Portland, US
• Windsor Owens · San Francisco, US
• Jeffrey S. Sullivan · Rexford, US
• Tim Thomas · Beaverton, US
• Mark Gesley · Oakland, US

Key dates

• Filing date: Jan 22, 2002
• Grant date: Apr 20, 2004
• Expiry date: Jan 22, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/31779
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

An electron beam lithography system includes a laser for generating a laser beam, and a beam splitter for splitting the laser beam into a plurality of light beams. The intensity of the light beams is individually modulated. The light beams are of sufficient energy such that, when they impinge on a photocathode, electrons are emitted. Modulation of the light beams controls modulation of the resulting electron beams. The electron beams are provided to an electron column for focusing and scanning control. Finally, the electron beams are used to write a scanning surface, for example, using an interlaced writing strategy.