End-point detection system for chemical mechanical polishing applications
US6726530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2002 |
| Grant date | Apr 27, 2004 |
| Priority date | — |
| Expiry date | Aug 6, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/14
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Chemical mechanical polishing systems and methods are disclosed. The system includes a polishing pad that is configured to move from a first point to a second point. A carrier is also included and is configured to hold a substrate to be polished over the polishing pad. The carrier is designed to apply the substrate to the polishing pad in a polish location that is between the first point and the second point. A first sensor is located at the first point and oriented so as to sense an IN temperature of the polishing pad, and a second sensor is located a the second point and oriented so as to sense an OUT temperature of the polishing pad. The sensing of the IN and OUT temperatures is configured to produce a temperature differential that allows monitoring the process state and the state of the wafer surface for purposes of switching the process steps while processing wafers by chemical mechanical planarization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.