Patent · US Expired

Method of patterning ferroelectric layers

US6730562B2 · kind B2 · utility

2Cited by

11References

36Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Manfred Engelhardt · Feldkirchen-Westerham, DE
Walter Hartner · Munich, DE
Frank Hintermaier · Hersbruck, DE
Gunther Schindler · Hersbruck, DE
Volker Weinrich · Paris, FR

Key dates

Filing date	Feb 11, 2003
Grant date	May 4, 2004
Priority date	—
Expiry date	Feb 11, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/31122
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for structuring ferroelectric layers on semiconductor substrates retains or regenerates the adherence and breakdown voltage resistance of the ferroelectric layer, which is especially significant for producing storage capacitors in large-scale integrated FeRAM and DRAM memory components. The addition of H2O or O2 results principally in the recovery of the electrostatic breakdown strength of the ferroelectric layer, which is of importance in particular when the ferroelectric serves as a dielectric of a storage capacitor and has to withstand electric fields of 5-10×106 V/m without a significant leakage current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.