Liner with poor step coverage to improve contact resistance in W contacts

US6734097B2 · kind B2 · utility

Assignees

• Infineon Technologies AG · DE
• International Business Machines Corporation · US

Inventors

• Roy Iggulden · Newburgh, US
• Padraic Shafer · Beacon, US
• Werner Robl · Regensburg, DE
• Kwong Hon Wong · Wappingers Falls, US

Key dates

• Filing date: Sep 28, 2001
• Grant date: May 11, 2004
• Expiry date: Oct 16, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of filling a damascene structure with liner and W characterized by improved resistance and resistance spread and adequate adhesion comprising: a given damascene structure coated by a liner which purposely provides poor step coverage into the afore mentioned structure, followed by a CVD W deposition, and followed by a metal isolation technique.