Method of photoresist ash residue removal
US6734120B1 · kind B1 · utility
11Cited by
25References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2000 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Feb 17, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of enabling the removal of fluorine containing residue from a semiconductor substrate comprising applying a gas and/or vapor to which the residue is reactive to the residue while the temperature of the substrate is at an elevated level with respect to ambient temperature and the residue is exposed to ultraviolet radiation, for a time period which is sufficient to effect at least one of volatilizing the residue or rendering the residue hydrophilic enough to be removable with deionized water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.