ROM embedded DRAM with anti-fuse programming
US6735108B2 · kind B2 · utility
9Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2002 |
| Grant date | May 11, 2004 |
| Priority date | — |
| Expiry date | Jul 8, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ROM embedded DRAM provides ROM cells that can be electrically programmed to a data state using DRAM capacitor memory cells. Numerous techniques for reading the memory cells are provided if a single state memory is desired. For example, bias techniques allow un-programmed ROM cells to be read accurately. In one embodiment, the memory includes program circuitry to short capacitor plates together by breaking down an intermediate dielectric layer using anti-fuse programming techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.