Patent · US Expired

Method for aligning a contact or a line to adjacent phase-shifter on a mask

US6737200B2 · kind B2 · utility

0Cited by
6References
31Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 29, 2001
Grant dateMay 18, 2004
Priority date—
Expiry dateJun 9, 2021

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/2022
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method for fabricating a mask which includes a printable contact and/or line area which is aligned with a phase-shifter. The method includes preparing a mask-in-process comprising a substrate underlying a first layer, an opaque layer overlying the first layer, and a first resist material overlying the opaque layer, and subjecting the mask-in-process to a plurality of exposures and at least one etching to create a phase-shifter and to open a printable contact and/or line area surrounded by a second resist material, wherein the printable contact and/or line area is aligned with the phase-shifter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.