Process for reducing hydrogen contamination in dielectric materials in memory devices
US6740605B1 · kind B1 · utility
83Cited by
7References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | May 5, 2003 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | May 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention, in one embodiment, relates to a process for fabricating a semiconductor device that is less susceptible to performance degradation caused by hydrogen contamination. The method includes the steps for removing unwanted hydrogen bonds by exposing the hydrogen bonds to ultraviolet radiation sufficient to break the bond and annealing in an atmosphere comprising at least one gas having at least one atom capable of forming bonds that replace the hydrogen bonds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.