Production of semiconductor integrated circuit
US6740901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2002 |
| Grant date | May 25, 2004 |
| Priority date | — |
| Expiry date | Dec 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
Abstract
A semiconductor integrated circuit in which the storage capacitor has an increased capacitance and a decreased leakage current. The storage capacitor is formed by the steps of: forming a polysilicon bottom electrode having semispherical silicon crystals formed thereon; performing plasma nitriding on the surface of said bottom electrode at a temperature lower than 550° C., thereby forming a film of silicon nitride having a film thickness smaller than 1.5 nm; and depositing a film of amorphous tantalum pentoxide and then crystallizing said amorphous tantalum pentoxide. The silicon nitride film has improved resistance to oxidation and also has a reduced leakage current. As a result, the polysilicon bottom electrode becomes resistant to oxidation and the storage capacitor increases in capacitance and decreases in leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.