Current switched magnetoresistive memory cell
US6744086B2 · kind B2 · utility
192Cited by
15References
59Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 2002 |
| Grant date | Jun 1, 2004 |
| Priority date | — |
| Expiry date | Jul 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A ferromagnetic thin-film based digital memory cell with a memory film of an anisotropic ferromagnetic material and with a source layer positioned on one side thereof so that a majority of conduction electrons passing therefrom have a selected spin orientation to be capable of reorienting the magnetization of the film. A disruption layer is positioned on the other side of the memory film so that conduction electrons spins passing therefrom are substantially random in orientation. The magnitude of currents needed to operate the cell can be reduced using coincident thermal pulses to raise the cell temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.